IKW40N65F5_13 Datasheet, PDF (7/18 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

IKW40N65F5,IKP40N65F5
Highspeedswitchingseriesfifthgeneration
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=150°C,
VR=400V,
IF=20.0A,
diF/dt=1000A/µs
Tvj=150°C,
VR=400V,
IF=5.0A,
diF/dt=1000A/µs
-
85
- ns
- 1.00 - µC
- 17.0 - A
- -220 - A/µs
-
50
- ns
- 0.50 - µC
- 14.0 - A
- -500 - A/µs
7
Rev.1.2,2013-12-18