IKW40N65F5_13 Datasheet, PDF (11/18 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

IKW40N65F5,IKP40N65F5
Highspeedswitchingseriesfifthgeneration
1.6
Eoff
Eon
1.4
Ets
0.8
Eoff
Eon
0.7
Ets
1.2
0.6
1.0
0.5
0.8
0.4
0.6
0.3
0.4
0.2
0.2
0.1
0.0
5
15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=20A,Dynamictestcircuitin
Figure E)
0.0
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
1.0
Eoff
0.9
Eon
Ets
0.8
0.7
0.6
16
130V
520V
14
12
10
0.5
8
0.4
6
0.3
4
0.2
2
0.1
0.0
0
200 250 300 350 400 450 500
0
20
40
60
80
100
VCE,COLLECTOR-EMITTERVOLTAGE[V]
QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
Figure 16. Typicalgatecharge
(IC=40A)
11
Rev.1.2,2013-12-18