IKP20N60T Datasheet, PDF (9/15 Pages) Infineon Technologies AG – IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
15V
120V
480V
10V
5V
0 V0 _{n C}
30nC 60nC 90nC
Q_GE, GATE CHARGE
Figure 17. Typical gate charge
(I_C=20 A)
120nC
1nF
C _iss
100pF
C _oss
C _rss
10pF
0V
10V 20V 30V 40V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(V_GE=0V, f = 1 MHz)
300A
250A
200A
150A
100A
50A
0 A1 _{2 V}
14V
16V
18V
V_GE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(V_CE ≤ 400V, T_j ≤ 150°C)
12µs
10µs
8µs
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
V_GE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(V_CE=600V, start at T_J=25°C,
T_Jmax<150°C)
Power Semiconductors
9
Rev. 2.2 Dec-04