IKP20N60T Datasheet, PDF (8/15 Pages) Infineon Technologies AG – IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
2.4mJ
*) E_on and E_ts include losses
due to diode recovery
E_ts*
2.0mJ
1.6mJ
1.2mJ
0.8mJ
E_off
0.4mJ
0.0mJ
0A
E_on*
5A 10A 15A 20A 25A 30A 35A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_J = 175°C,
V_CE = 400V, V_GE = 0/15V, R_G = 12Ω,
Dynamic test circuit in Figure E)
2.4m J ^{*) Eon and Ets include losses}
due to diode recovery
E _ts*
2.0m J
1.6m J
E _off
1.2m J
0.8m J
0.4m J
E _on*
0.0m J
0Ω
15Ω
30Ω
45Ω
60Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_J = 175°C,
V_CE = 400V, V_GE = 0/15V, I_C = 20A,
Dynamic test circuit in Figure E)
*) E_on and E_ts include losses
due to diode recovery
1.0mJ
E_ts*
0.8mJ
0.6mJ
E_off
0.4mJ
E_on*
0.2mJ
0.0mJ
25°C 50°C 75°C 100°C 125°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V_CE = 400V,
V_GE = 0/15V, I_C = 20A, R_G = 12Ω,
Dynamic test circuit in Figure E)
2 .0 m J
1 .8 m J
1 .6 m J
*) E_on and E_ts include losses
due to diode recovery
1 .4 m J
1 .2 m J
1.0m J ^Ets^*
0 .8 m J
E _off
0 .6 m J
0 .4 m J
0 .2 m J
E_on*
0 .0 m J
300V 350V 400V 450V 500V 550V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, T_J = 175°C,
V_GE = 0/15V, I_C = 20A, R_G = 12Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
8
Rev. 2.2 Dec-04