IKP20N60T Datasheet, PDF (7/15 Pages) Infineon Technologies AG – IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
100ns
t_d(on)
10ns
t _{d (o ff)}
t_f
t_r
1ns
0A 5A 10A 15A 20A 25A 30A 35A
Figure 9.
I_C, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, T_J=175°C,
V_CE = 400V, V_GE = 0/15V, R_G = 12Ω,
Dynamic test circuit in Figure E)
t_d(off)
100ns
t_f
t _{d (o n )}
t_r
10ns
10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω
R_G, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T_J = 175°C,
V_CE= 400V, V_GE = 0/15V, I_C = 20A,
Dynamic test circuit in Figure E)
100ns
t_d(off)
t_f
t _{d (o n )}
10ns
25°C
50°C
t_r
75°C 100°C 125°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V_CE = 400V,
V_GE = 0/15V, I_C = 20A, R_G=12Ω,
Dynamic test circuit in Figure E)
7V
6V
max.
typ.
5V
4V min.
3V
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(I_C = 0.29mA)
Power Semiconductors
7
Rev. 2.2 Dec-04