IKP20N60T Datasheet, PDF (6/15 Pages) Infineon Technologies AG – IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
50A
40A
30A
20A
V_GE=20V
15V
13V
11V
9V
7V
10A
0A
0V
1V
2V
3V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T_j = 25°C)
50A
V_GE=20V
40A
15V
13V
30A
11V
9V
20A
7V
10A
0A
0V
1V
2V
3V
4V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T_j = 175°C)
35A
30A
25A
20A
15A
10A
5A
T_J=175°C
25°C
0A
0V
2V
4V
6V
8V
V_GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V_CE=10V)
2.5V
2.0V
I_C=40A
1.5V
1.0V
I_C=20A
I_C=10A
0.5V
0.0V
0°C
50°C
100°C
150°C
T_J, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V_GE = 15V)
Power Semiconductors
6
Rev. 2.2 Dec-04