IKP20N60T Datasheet, PDF (3/15 Pages) Infineon Technologies AG – IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Dynamic Characteristic
Input capacitance
C_iss
V_CE=25V,
-
Output capacitance
C_oss
V_GE=0V,
-
Reverse transfer capacitance
C_rss
f=1MHz
-
Gate charge
Q_Gate
V_CC=480V, I_C=20A
-
V_GE=15V
Internal emitter inductance
L_E
TO-220-3-1
-
measured 5mm (0.197 in.) from case
TO-247-3-1
Short circuit collector current¹⁾
TO-263-3-2
I_C(SC)
V_GE=15V,t_SC≤5µs
-
V_CC = 400V,
T _j ≤ 150° C
1100
71
32
120
7
183.3
- pF
-
-
- nC
- nH
-A
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
Q_rr
I_rrm
di_rr/dt
T_j=25°C,
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G=12 Ω,
L_σ²⁾=131nH,
C_σ²⁾=31pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=25°C,
V_R=400V, I_F=20A,
di_F/dt=880A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
18
14
199
42
0.31
0.46
0.77
41
0.31
13.3
711
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
2) _{Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.}
Power Semiconductors
3
Rev. 2.2 Dec-04