IKP20N60T Datasheet, PDF (11/15 Pages) Infineon Technologies AG – IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
T_J=175°C
24A
20A
16A
T_J=25°C
12A
8A
4A
0A
600A/µs
900A/µs
1200A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(V_R = 400V, I_F = 20A,
Dynamic test circuit in Figure E)
-750A/µs
T_J=25°C
-600A/µs
-450A/µs
-300A/µs
T_J=175°C
-150A/µs
0A/µs
600A/µs
900A/µs
1200A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(V_R=400V, I_F=20A,
Dynamic test circuit in Figure E)
50A
40A
T_J=25°C
175°C
30A
20A
10A
0A
0V
1V
2V
V_F, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
2.0V
I_F=40A
1.5V
1.0V
20A
10A
0.5V
0.0V
0°C
50°C
100°C
150°C
T_J, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
Power Semiconductors
11
Rev. 2.2 Dec-04