IKP20N60T Datasheet, PDF (4/15 Pages) Infineon Technologies AG – IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Switching Characteristic, Inductive Load, at T_j=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
Q_rr
I_rrm
di_rr/dt
T_j=175°C,
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G= 12 Ω
L_σ¹⁾=131nH,
C_σ¹⁾=31pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=175°C
V_R=400V, I_F=20A,
di_F/dt=880A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
18
18
223
76
0.51
0.64
1.15
176
1.46
18.9
467
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
1) _{Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.}
Power Semiconductors
4
Rev. 2.2 Dec-04