IKP20N60T Datasheet, PDF (2/15 Pages) Infineon Technologies AG – IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
IKP20N60T, IKB20N60T
TrenchStop Series
IKW20N60T
Symbol
Conditions
R_thJC
R_thJCD
R_thJA
TO-220-3-1
TO-247-3-1
TO-263-3-2
TO-220-3-1
TO-247-3-1
TO-263-3-2
TO-220-3-1
TO-247-3-1
TO-263-3-2 (6cm² Cu)
Max. Value
0.9
1.5
62
40
40
Unit
K/W
Electrical Characteristic, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V_(BR)CES
V_CE(sat)
V_F
V_GE(th)
I_CES
V_GE=0V, I_C=0.2mA
V_GE = 15V, I_C=20A
T_j=25°C
T_j=175°C
V_GE=0V, I_F=20A
T_j=25°C
T_j=175°C
I_C=290µA,V_CE=V_GE
V_CE=600V,
V_GE=0V
T_j=25°C
T_j=175°C
I_GES
g_fs
R_Gint
V_CE=0V,V_GE=20V
V_CE=20V, I_C=20A
min.
600
-
-
-
-
4.1
-
-
-
-
Value
Typ.
-
1.5
1.9
1.65
1.6
4.9
-
-
-
11
-
Unit
max.
-V
2.05
-
2.05
-
5.7
µA
40
1000
100 nA
-S
Ω
Power Semiconductors
2
Rev. 2.2 Dec-04