BFP740F_15 Datasheet, PDF (9/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

3
Maximum Ratings
BFP740F
Maximum Ratings
Table 3-1 Maximum Ratings at T_A = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Max.
Collector emitter voltage
V_CEO
V
Open base
–
4.0
T_A = 25 °C
–
3.5
T_A = -55 °C
Collector emitter voltage
V_CES
–
13
V
E-B short circuited
Collector base voltage
V_CBO
–
13
V
Open emitter
Emitter base voltage
V_EBO
–
1.2
V
Open collector
Collector current
I_C
–
45
mA
–
Base current
I_B
–
4
mA
–
Total power dissipation¹⁾
P_tot
–
160
mW
T_S ≤ 102 °C
Junction temperature
T_J
–
150
°C
–
Storage temperature
T_Stg
-55
150
°C
–
1) T_S is the soldering point temperature. T_S is measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
9
Revision 2.0, 2015-03-12