BFP740F_15 Datasheet, PDF (7/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP740F
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Product Brief
Product Brief
The BFP740F is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s
reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design
supports voltages up to V_CE = 4 V and currents up to I_C = 45 mA. With its high linearity at currents as low as 10
mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately
45 GHz, hence the device offers high power gain at frequencies up to 10 GHz in amplifier applications. The device
is housed in a thin small flat plastic package with visible leads.
Data Sheet
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Revision 2.0, 2015-03-12