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BFP740F_15 Datasheet, PDF (17/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor
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BFP740F
Electrical Characteristics
102
101
100
10−1
10−2
10−3
10−4
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
VBE [V]
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V
100
10−1
10−2
10−3
10−4
10−5
10−6
10−7
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
VBE [V]
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
Data Sheet
17
Revision 2.0, 2015-03-12
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