BFP740F_15 Datasheet, PDF (25/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP740F
Electrical Characteristics
3
2.8
f = 10GHz
f = 8GHz
2.6
f = 5.5GHz
2.4
f = 3.5GHz
2.2
f = 2.4GHz
f = 1.9GHz
2
f = 1.5GHz
1.8
f = 0.9GHz
1.6
f = 0.45GHz
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
I_C [mA]
Figure 5-19 Noise Figure NF_min = f (I_C), V_CE = 3 V, Z_S = Z_opt, f = Parameter in GHz
3
2.8
2.6
f = 10GHz
2.4
f = 8GHz
2.2
f = 5.5GHz
2
f = 3.5GHz
1.8
f = 2.4GHz
1.6
f = 1.9GHz
1.4
f = 1.5GHz
1.2
f = 0.9GHz
1
f = 0.45GHz
0.8
0.6
0.4
0.2
0
0
5
10
15
20
I_C [mA]
Figure 5-20 Noise Figure NF₅₀ = f (I_C), V_CE = 3 V, Z_S = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves.
Data Sheet
25
Revision 2.0, 2015-03-12