BFP740F_15 Datasheet, PDF (21/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP740F
Electrical Characteristics
0.2
0.16
0.12
0.08
0.04
0
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4
V_CB [V]
Figure 5-11 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz
40
35
30
G_ms
25
20
|S |²
21
15
G_ma
10
5
0
0 1 2 3 4 5 6 7 8 9 10
f [GHz]
Figure 5-12 Gain G_ma,G_ms, |S₂₁|² = f (f), V_CE = 3 V, I_C = 15 mA
Data Sheet
21
Revision 2.0, 2015-03-12