BFP740F_15 Datasheet, PDF (23/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP740F
Electrical Characteristics
0.5
0.4
0.3
0.2
10.0
9.0
10.0
9.0
8.0
8.0 _7.0
0.1
0
0.1
−0.1
−0.2
6.0
7.0
5.0
6₀._.0_{2 0.3 0.4 0.5}
4.0
5.0
3.0
4.0
2.0
3.0
−0.3
−0.4
2.0
−0.5
1
1.5
2
0.03 to 10 GHz
3
4
5
10
1 1.5 2 3 4 5
0.03
0.03
−10
1.0
−1
1.0
−2
−1.5
−5
−4
−3
6.0mA
15mA
Figure 5-15 Input Matching S₁₁ = f (f), V_CE = 3 V, I_C = 6 / 15 mA
0.5
0.4
0.3
1
1.5
2
0.2
0.1
0
−0.1
3.5
5.5
2.4
1.9
3.5 ^2.41.91.5
1.5
0.9
0.1 0.2 0.3 0.4 0.5 ^8.0 5.5 1 10.5.9 2 0.5 3 4 5
0.5
8.0
10.0 ^10.0
−0.2
−0.3
−0.4
−0.5
−2
−1.5
−1
3
4
5
10
−10
−5
−4
−3
6mA
15mA
Figure 5-16 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 3 V, I_C = 6 / 15 mA
Data Sheet
23
Revision 2.0, 2015-03-12