BFP740F_15 Datasheet, PDF (20/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP740F
Electrical Characteristics
30
151617 _{18 20}
22 ²³
24
19
25
21
20
25
15
24
10
5
1.5
21
23 ₂₁
2
23
24 _{222240 23 21}
2.5
3
V_CE [V]
24
24
2220
23
19
21
3.5
4
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 5.5 GHz
30
12
6
25
11
20
15
6
7
5
10 4
3
2
1
0
−1
5
1.5
2
9
8
8
7
6
6
5
5
4
4
3
3
2
1
−01
2
1
−01
2.5
3
3.5
V_CE [V]
10
9
7
4
4
Figure 5-10 Compression Point at output OP_1dB [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 5.5 GHz
Data Sheet
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Revision 2.0, 2015-03-12