BFP740F_15 Datasheet, PDF (19/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP740F
5.5
Characteristic AC Diagrams
Measurement setup is a test fixture with Bias T´s in a 50 Ω system, T_A = 25 °C.
Electrical Characteristics
50
45
4.00V
40
35
3.00V
30
25
2.50V
20
15
10
2.00V
5
1.00V
0
0
10
20
30
40
50
IC [mA]
Figure 5-7 Transition Frequency f_T = f (I_C), f = 2 GHz, V_CE = Parameter in V
26
24
22
20
18
16
14
12
10
8
2V, 2400MHz
6
3V, 2400MHz
2V, 5500MHz
4
3V, 5500MHz
2
0
0
5
10
15
20
25
30
I
C
[mA]
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (I_C), Z_S = Z_L = 50 Ω, Parameters: V_CE in V, f in MHz
Data Sheet
19
Revision 2.0, 2015-03-12