SPP07N60S5_09 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

13 Avalanche power losses
P_AR = f (f )
parameter: E_AR=0.5mJ
300
W
200
SPP07N60S5
SPI07N60S5
14 Typ. capacitances
C = f (V_DS)
parameter: V_GS=0V, f=1 MHz
10 ⁴
pF
C_iss
10 ³
150
10 ²
C_oss
100
10 ¹
C_rss
50
0
10
4
10 ⁵
15 Typ. C_oss stored energy
E_oss=f(V_DS)
5.5
µJ
MHz ^{10 6}
f
10 ⁰
0
100 200 300 400
V
600
V_DS
16 Typ. gate threshold voltage
V_GS(th) = f (T_j)
parameter: V_GS = V_DS
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
100 200 300 400
Rev. 2.7
V
600
V_DS
Page 8
2009-11-27