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SPP07N60S5_09 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
SPP07N60S5
SPI07N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Characteristics
Transconductance
gfs
VDS≥2*ID*RDS(on)max,
-
4
-S
ID=4.6A
Input capacitance
Ciss
VGS=0V, VDS=25V,
- 970 - pF
Output capacitance
Coss
f=1MHz
- 370 -
Reverse transfer capacitance Crss
-
10
-
Effective output capacitance,3) Co(er) VGS=0V,
-
30
- pF
energy related
VDS=0V to 480V
Effective output capacitance,4) Co(tr)
-
55
-
time related
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
VDD=350V, VGS=0/10V,
-
tr
ID=7.3A, RG=12Ω
-
t d(off)
-
120 - ns
40
-
170 255
Fall time
tf
-
20 30
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=350V, ID=7.3A
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=350V, ID=7.3A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=7.3A
-
7.5
- nC
- 16.5 -
-
27 35
-
8
-V
1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
4Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.7
Page 3
2009-11-27