SPP07N60S5_09 Datasheet, PDF (5/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

1 Power dissipation
P_tot = f (T_C)
100 ^SPP07N60S5
W
SPP07N60S5
SPI07N60S5
2 Safe operating area
I_D = f ( V_DS )
parameter : D = 0 , T_C=25°C
10 ²
A
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
T_C
3 Typ. output characteristic
I_D = f (V_DS); T_j=25°C
parameter: t_p = 10 µs, V_GS
25
20V
A
12V
15
10V
9V
10
8V
5
7V
10 ¹
10 ⁰
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10 ^-1
tp = 1 ms
DC
10
-2
10
0
10 ¹
10 ²
4 Typ. output characteristic
I_D = f (V_DS); T_j=150°C
parameter: t_p = 10 µs, V_GS
12
20V
A
12V
10V
8
V ^{10 3}
V_DS
9V
8.5V
8V
6
7.5V
4
7V
2
6.5V
6V
0
0
5
10
15
V
25
V_DS
0
0
5
10
15
V
25
V_DS
Rev. 2.7
Page 5
2009-11-27