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| SPP07N60S5_09 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology | |||
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Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Worldwide best RDS(on) in TO 220
⢠Ultra low gate charge
⢠Periodic avalanche rated
⢠Extreme dv/dt rated
⢠Ultra low effective capacitances
⢠Improved transconductance
SPP07N60S5
SPI07N60S5
VDS
RDS(on)
ID
600 V
0.6 â¦
7.3 A
PG-TO262 PG-TO220
2
P-TO220-3-1
23
1
Type
SPP07N60S5
SPI07N60S5
Package
PG-TO220
PG-TO262
Ordering Code
Q67040-S4172
Q67040-S4328
Marking
07N60S5
07N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = - A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 7.3 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
7.3
4.6
14.6
230
0.5
7.3
±20
±30
83
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.7
Page 1
2009-11-27
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