SPP07N60S5_09 Datasheet, PDF (6/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

5 Typ. drain-source on resistance
R_DS(on)=f(I_D)
parameter: T_j=150°C, V_GS
3
SPP07N60S5
SPI07N60S5
6 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 4.6 A, V_GS = 10 V
SPP07N60S5
3.4
Ω
2.8
mΩ
2.4
2
2
20V
12V
10V
9V
1.5
8.5V
8V
7.5V
7V
6.5V
1
6V
0
2
4
6
8 10 _A
14
I_D
1.6
1.2
0.8
98%
typ
0.4
0
-60 -20 20
60 100 °C
180
T_j
7 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
24
A
20
18
8 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 7.3 A pulsed
SPP07N60S5
16
V
0.2 V_{DS max}
12 ^{0.8 VDS max}
16
25 °C
10
14
150 °C
12
8
10
6
8
6
4
4
2
2
0
0
4
8
12
V
20
V_GS
0
0 4 8 12 16 20 24 28 32 nC 38
Q_Gate
Rev. 2.7
Page 6
20079-11-27