SPP07N60S5_09 Datasheet, PDF (4/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP07N60S5
SPI07N60S5
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Inverse diode continuous
forward current
I_S
T_C=25°C
-
-
7.3 A
Inverse diode direct current,
I_SM
pulsed
-
- 14.6
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V_SD
t_rr
Q_rr
V_GS=0V, I_F=I_S
V_R=350V, I_F=I_S ,
di_F/dt=100A/µs
-
1
1.2 V
-
750 1275 ns
-
4.9
- µC
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
Value
typ.
typ.
Thermal resistance
Thermal capacitance
R_th1
R_th2
R_th3
R_th4
R_th5
R_th6
0.024
0.046
0.085
0.308
0.317
0.112
K/W
C_th1
C_th2
C_th3
C_th4
C_th5
C_th6
0.00012
0.0004578
0.000645
0.001867
0.004795
0.045
Unit
Ws/K
P_tot (t)
T_j R _th1
C _{th 1}
C _{th 2}
R_{th,n Tcase} ^{External Heatsink}
C _{th ,n}
T_amb
Rev. 2.7
Page 4
2009-11-27