SPP07N60S5_09 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

9 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{2 SPP07N60S5}
A
10 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
8
A
SPP07N60S5
SPI07N60S5
10 ¹
6
5
T j(START) =25°C
4
10 ⁰
10 ^-1
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
3
T j(START) =125°C
2
1
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
µs ^{10 4}
t_AR
11 Avalanche energy
E_AS = f (T_j)
par.: I_D = - A, V_DD = 50 V
260
mJ
220
12 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
SPP07N60S5
720
V
200
680
180
660
160
140
640
120
620
100
80
600
60
580
40
560
20
0
20 40 60 80 100 120 °C 160
T_j
540
-60 -20
20
60 100 °C
180
T_j
Rev. 2.7
Page 7
2009-11-27