SPP07N60S5_09 Datasheet, PDF (2/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP07N60S5
SPI07N60S5
Maximum Ratings
Parameter
Drain Source voltage slope
V_DS = 480 V, I_D = 7.3 A, T_j = 125 °C
Symbol
dv/dt
Value
20
Unit
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm² cooling area ²⁾
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
Symbol
R_thJC
R_thJA
R_thJA
T_sold
Values
Unit
min. typ. max.
-
-
1.5 K/W
-
-
62
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V_(BR)DSS V_GS=0V, I_D=0.25mA 600
-
Drain-Source avalanche
V_(BR)DS VGS=0V, ID=7.3A
- 700
breakdown voltage
-V
-
Gate threshold voltage
Zero gate voltage drain current
V_GS(th) I_D=350µΑ, V_GS=V_DS 3.5
I _DSS
V_DS=600V, V_GS=0V,
T_j=25°C,
-
T_j=150°C
-
4.5 5.5
µA
0.5 1
- 100
Gate-source leakage current
I _GSS
V_GS=20V, V_DS=0V
-
- 100 nA
Drain-source on-state resistance R_DS(on) VGS=10V, ID=4.6A,
Ω
T_j=25°C
- 0.54 0.6
T_j=150°C
- 1.46 -
Gate input resistance
R_G
f=1MHz, open Drain
-
19
-
Rev. 2.7
Page 2
2009-11-27