PTFB191501E Datasheet, PDF (8/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz

Confidential, Limited Internal Distribution
Reference Circuit (cont.)
VDD
R802 C801 C802
RF_IN
C106 C104 ^S3
R101
R102
C102 C103
R801
C803
C105
R804
R803
S1
S2
R103 _C107
C101
PTFB191501E
PTFB191501F
VDD
C206
C201 _C204
C210
C208
C212
C203
C202
C205
C207
C211
C209
RF_OUT
C213
VDD
Reference circuit assembly diagram (not to scale)*
Circuit Assembly Information
DUT
PTFB191501E or PTFB191501F
INPUT PCB
0.762 mm [.030"] thick, εr = 4.5
OUTPUT PCB 0.762 mm [.030"] thick, εr = 4.5
LDMOS Transistor
TMM 4
TMM 4
2 oz. copper
2 oz. copper
b 1 9 1 5 0 1 e f - v 1 _ C D _ 9 - 2 -0 9
*Gerber files for this circuit available on request
Data Sheet
8 of 15
Rev. 02, 2009-09-09