PTFB191501E Datasheet, PDF (6/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz

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Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
2020
1990
1960
1930
1900
Z Source Ω
R
jX
3.91
–8.14
4.03
–8.30
4.15
–8.46
4.28
–8.62
4.42
–8.79
Z Load Ω
R
jX
1.01
–3.97
1.01
–4.13
1.03
–4.29
1.04
–4.45
1.06
–4.62
See next page for Reference Circuit information
PTFB191501E
PTFB191501F
Z₀ = 50 Ω
Z Load
0.1
2020 MHz
1900 MHz
0.2
Z Source
0.3
Data Sheet
6 of 15
Rev. 02, 2009-09-09