PTFB191501E Datasheet, PDF (4/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
40
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1.20 A,
ƒ₁ = 1990 MHz, ƒ₂ = 1989 MHz
Efficiency
IMD3
42 44 46 48 50 52
Output Power, PEP (dBm)
55
50
45
40
35
30
25
20
15
10
5
54
PTFB191501E
PTFB191501F
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1.20 A,
ƒ₁ = 1990 MHz, ƒ₂ = 1989 MHz
20
55
19
Gain
45
18
35
Efficiency
17
25
16
15
15
5
40 42 44 46 48 50 52 54
Output Power, PEP (dBm)
Two-tone Drive-up at Selected Frequencies
V_DD = 30 V, I_DQ = 1.20 A, Tone Spacing = 1 MHz
-20
-30
1990 MHz
1960 MHz
-40
1930 MHz
-50
-60
-70
41 43 45 47 49 51 53
Output Power, PEP (dBm)
Intermodulation Distortion vs. Output Power
V_DD = 30 V, I_DQ = 1.20 A, ƒ₁ = 1990 MHz, ƒ₂ = 1989 MHz
-20
-30
-40
-50
-60
-70
40
3rd
5th
7th
45
50
55
Output Power, PEP (dBm)
Data Sheet
4 of 15
Rev. 02, 2009-09-09