PTFB191501E Datasheet, PDF (14/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz

Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37248-2
2X 4.83±0.51
[.190±.020]
( 45° X 2.72
[.107])
CL
D
PTFB191501E
PTFB191501F
LID 9.40^{+–00..1150}
FLANGE 9.78 ^{[.370+–..000064 ]}
[.385]
19.43±0.51
CL ^{[.765±.020]}
4X[RR.002.50₊0_–.8_{.0010+–5500]..132871}
SPH 1.57
[.062]
0.0381 [.0015] -A-
3.61±0.38
[.142±.015]
G
2X 12.70
[.500]
19.81±0.20
[.780±.008]
CL
S
20.57
[.810]
1.02
[.040]
248-cases:h-31248-2_po
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6 Gold plating thickness: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
14 of 15
Rev. 02, 2009-09-09