PTFB191501E Datasheet, PDF (3/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFB191501E
PTFB191501F
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 1.20 A, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
-25
1990 MHz Low
-30
1990 MHz Up
1960 MHz Low
-35
1960 MHz Up
1930 MHz Low
-40
1930 MHz Up
-45
-50
-55
-60
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Two-carrier WCDMA 3GPP
V_DD = 30 V, I_DQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
20
50
19
40
Gain
18
30
17
20
Efficiency
16
10
15
0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
CW Power Sweep
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.20 A, ƒ = 1990 MHz
20
19
18
17
16
15
14
41
Gain
Efficiency
43 45 47 49 51
Output Power (dBm)
65
55
45
35
25
15
5
53
Two-tone Broadband Performance
V_DD = 30 V, I_DQ = 1.20 A, P_OUT = 63 W
60
-5
55
IRL
-10
50
-15
45
Efficiency
-20
40
-25
35
IMD3
-30
30
-35
25
-40
20
Gain
-45
15
-50
1890 1910 1930 1950 1970 1990 2010 2030
Frequency (MHz)
Data Sheet
3 of 15
Rev. 02, 2009-09-09