PTFB191501E Datasheet, PDF (1/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz

Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 1930 – 1990 MHz
Description
The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs
designed for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced, RoHs-compliant package with slotted and
earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFB191501E
Package H-36248-2
PTFB191501F
Package H-37248-2
PTFB191501E
PTFB191501F
Two-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
-20
40
-25
Efficiency
35
-30
IMD Up
30
-35
25
-40
20
-45
15
IMD Low
-50
10
-55
ACPR
5
-60
0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
RF Characteristics
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
1990 MHz, 30 V
- Average output power = 35 W
- Linear gain = 18 dB
- Efficiency = 30%
- Intermodulation distortion = –35 dBc
• Typical CW performance, 1990 MHz, 30 V
- Output power at P–1dB = 150 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V, 150 W
(CW) output power
• Pb-free, RoHS-compliant
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 30 V, I_DQ = 1.2 A, P_OUT = 35 W average, ƒ₁ = 1985 MHz, ƒ₂ = 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
—
18
η_D
—
30
IMD
—
–35
Max
—
—
—
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Rev. 02, 2009-09-09