PTFB191501E Datasheet, PDF (5/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.20 A, ƒ = 1990 MHz
21
–10 °C
20
25 °C
85 °C
19
Efficiency
60
50
40
18
30
17
20
Gain
16
10
43 44 45 46 47 48 49 50 51 52 53
Output Power (dBm)
PTFB191501E
PTFB191501F
CW Performance
Gain vs. Output Power
V_DD = 30 V, ƒ = 1990 MHz
19
I_DQ = 1.40 A
18
I_DQ = 1.20 A
I_DQ = 0.80 A
17
16
42 44 46 48 50 52 54
Output Power (dBm)
Single-carrier WCDMA
V_DD = 30 V, I_DQ = 1.20A, f = 1990 MHz
3GPP_WCDMA, PAR = 8dB, BW 3.84MHz
-20
40
Efficiency
-30
30
-40
20
-50
10
ACP up
ACP low
-60
0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.40 A
1.53 A
2.67 A
3.80 A
4.93 A
6.07 A
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
5 of 15
Rev. 02, 2009-09-09