PTFB191501E Datasheet, PDF (2/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz

Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1.2 A, P_OUT = 150 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min
G_ps
17
η_D
42
IMD
—
PTFB191501E
PTFB191501F
Typ
Max
Unit
18
—
dB
44
—
%
–30
–28
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 1.2 A
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.4
—
Typ
—
—
—
0.08
2.9
—
Max
—
1.0
10.0
—
3.4
1.0
Unit
V
µA
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 200 W CW)
Symbol
V_DSS
V_GS
T_J
T_STG
R_θJC
Value
65
–6 to +10
200
–40 to +150
0.29
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB191501E V1
PTFB191501E V1 R250
PTFB191501F V1
PTFB191501F V1 R250
Package Type
H-36248-2
H-36248-2
H-37248-2
H-37248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Thermally-enhanced earless flange, single-ended
Shipping
Tray
Tape & Reel 250 pcs
Tray
Tape & Reel 250 pcs
Data Sheet
2 of 15
*See Infineon distributor for future availability.
Rev. 02, 2009-09-09