PTFA191001E Datasheet, PDF (8/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz

Confidential, Limited Internal Distribution
Reference Circuit (cont.)
R5
R4
C1
C3
VDD
C4
+
10
35V
R3 _C2
LM QQ1
C5 R2
R6
R1
Q1
R7 ^C6
C7
C8
RF_IN
R8
R9
C9
PTFA191001E
PTFA191001F
VDD
C10
C11 _C12
C18
C13
C20
C19
C21
C17
C15 C16
C14
VDD
RF_OUT
A 1 9 1 0 0 1 e f _ a ssy
R5
C4
+
C5
R6
R4
C1
C3
VDD
R3 _C2 ^{LM QQ1}
R2
R1
Q1
R7 ^C6
C7
C8
R8
A191001ef_dtl
Reference circuit assembly diagram* (not to scale)
*Gerber Files for this circuit available on request
Data Sheet
8 of 11
Rev. 04, 2007-10-31