PTFA191001E Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz

PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTFA191001E V4
PTFA191001F V4
Package Type
H-36248-2
H-37248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA191001E
PTFA191001F
Typical Performance (data taken in a production test fixture)
Broadband Performance
V_DD = 30 V, I_DQ = 900 mA, P_OUT = 44.0 dBm
35
-5
Return Loss
30
-10
-15
25
Efficiency
-20
20
-25
15 _Gain
-30
10
-35
1900 1920 1940 1960 1980 2000 2020
Frequency (MHz)
Two-carrier WCDMA at Selected Biases
V_DD = 30 V, ƒ = 1960 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I_DQ
-30
-35
1.1 A
-40
1.0 A
-45
900 mA
-50
800 mA
-55
34 36 38 40 42 44 46
Output Power, PEP (dBm)
Data Sheet
3 of 11
Rev. 04, 2007-10-31