PTFA191001E Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
V_DD = 30 V, I_DQ = 900 mA, ƒ = 1960 MHz
18
60
50
17
Gain
40
16
30
Efficiency
15
T_CASE = 25°C
20
T_CASE = 90°C
14
0
10
20 40 60 80 100 120
Output Power (W)
PTFA191001E
PTFA191001F
Single-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 900 m A, ƒ = 1960 MHz,
3GPP WCDMA s ignal, TM1 w/16 DPCH, 67% clipping,
PAR = 8.5 dB, 3.84 MHz BW
-35
40
-40
Efficiency
30
-45
20
-50
-55
33
ACPR
ACPR Up
ACPR Low
35
37
39
41
43
Average Output Power (dBm )
10
0
45
Voltage Sweep
I_DQ = 900 mA, ƒ = 1960 MHz,
tone spacing = 1 MHz, P_OUT (PEP) = 50 dBm
-10
55
-15
IM3 Up
-20
-25
50
Efficiency ⁴⁵
40
35
-30
30
25
-35
20
-40
Gain ¹⁵
-45
10
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 30 V I_DQ = 900 mA, ƒ = 1960 MHz,
P_OUT = 49.5 dBm PEP
-25
-30
-35 ^{3rd Order}
-40
5th
-45
-50
7th
-55
-60
0
10
20
30
40
Tone Spacing (MHz)
Data Sheet
4 of 11
Rev. 04, 2007-10-31