PTFA191001E Datasheet, PDF (6/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz

Confidential, Limited Internal Distribution
Reference Circuit
PTFA191001E
PTFA191001F
C1
0.001µF
R2
1.3KV
R1
1.2K V
QLMQ71805
Q1
VDD
BCP56
C2
0.001µF C0.3001µF
R3
2K V
R4
2K V
R5
10 V
R6
5.1K V
R8
2KV
C4
10 µF
35V
C0.51µF R5.71K_V
C6
1µF
0C.701µF
1C08pF ^l5
1R0 ⁹V
C10
C11
10 pF 1 µF
l7
C12
0.02 µF
C13
10 µF
50V
RF_IN
l1
l2
C109pF
l4
DUT
l3
l6
C18
1.0 pF
C21
10 pF
l9
l10
l11 l12 l13
l14
l15
C19
l8
1.0 pF
C20
1.5 pF
VDD
RF_OUT
C14
10 pF
C15
1 µF
C16
0.02 µF
C17
10 µF
50V
A 1 9 1 0 0 1 e f _ sc h
Reference circuit schematic for ƒ = 1960 MHz
Circuit Assembly Information
DUT
PTFA191001E or PTFA191001F
PCB
0.76 mm [.030”] thick, ε_r = 4.5
LDMOS Transistor
Rogers TMM4
Microstrip
Electrical Characteristics at 1960 MHz¹
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10 (taper)
l11 (taper)
l12
l13
l14
l15
0.352 λ, 50.4 Ω
0.183 λ, 38.0 Ω
0.016 λ, 11.4 Ω
0.026 λ, 60.0 Ω
0.213 λ, 60.0 Ω
0.069 λ, 6.9 Ω
0.289 λ, 54.5 Ω
0.289 λ, 54.5 Ω
0.040 λ, 5.0 Ω
0.050 λ, 5.0 Ω / 11.8 Ω
0.027 λ, 11.8 Ω / 31.0 Ω
0.009 λ, 31.0 Ω
0.034 λ, 41.0 Ω
0.086 λ, 41.0 Ω
0.364 λ, 50.4 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
29.31 x 1.42
14.86 x 2.16
1.22 x 10.19
2.16 x 0.99
18.03 x 0.99
5.11 x 17.86
24.16 x 1.24
24.16 x 1.24
2.95 x 25.40
3.81 x 25.40 / 9.80
2.18 x 9.80 / 2.84
0.76 x 2.87
2.82 x 1.91
7.06 x 1.91
30.33 x 1.42
Data Sheet
6 of 11
2 oz. copper
Dimensions: L x W (in.)
1.154 x 0.056
0.585 x 0.085
0.048 x 0.401
0.085 x 0.039
0.710 x 0.039
0.201 x 0.703
0.951 x 0.049
0.951 x 0.049
0.116 x 1.000
0.150 x 1.000 / 0.386
0.086 x 0.386 / 0.112
0.030 x 0.113
0.111 x 0.075
0.278 x 0.075
1.194 x 0.056
Rev. 04, 2007-10-31