PTFA191001E Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz

Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
100 W, 1930 – 1990 MHz
Description
The PTFA191001E and PTFA191001F are thermally-enhanced,
100-watt, internally-matched LDMOS FETs intended for WCDMA,
IS-95 and CDMA2000 applications. They are characterized for single-
and two-carrier WCDMA operation from 1930 to 1990 MHz.
Thermally-enhanced packaging provides the coolest operation
available.
PTFA191001E
Package H-36248-2
PTFA191001F
Package H-37248-2
PTFA191001E
PTFA191001F
Two-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 900 mA, ƒ = 1960 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-23
35
Efficiency
-28
30
-33
25
IM3
-38
20
-43
15
-48
-53
34
ACPR
36 38 40 42 44
Average Output Power (dBm)
10
5
46
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at 1960
MHz, 30 V
- Average output power = 25 W
- Linear Gain = 17.0 dB
- Efficiency = 27.5%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –41.0 dBc
• Typical two-carrier IS-95 performance at 1930
MHz, 30 V
- Average output power = 25 W
- Efficiency = 28%
- Intermodulation distortion = –35 dBc @ 1.2288
- Adjacent channel power = –51 dBm
• Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 130 W
- Efficiency = 56%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
100 W (CW) output power
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 04, 2007-10-31