PTFA191001E Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz

PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 900 mA, P_OUT = 44 dBm average
ƒ₁ = 1955 MHz, ƒ₂ = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Gain
G_ps
16
17.0
—
Drain Efficiency
η_D
26
28
—
Intermodulation Distortion
IMD
—
–37
–35
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 900 mA
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.08
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 100 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
417
2.38
–40 to +150
0.42
Unit
V
V
°C
W
W/°C
°C
°C/W
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 04, 2007-10-31