PTFA191001E Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
IS-95 Two-carrier NCDMA Drive-up
V_DD = 30 V, I_DQ = 900 mA,
ƒ₁ = 1962.5 MHz, ƒ₂ = 1960 MHz
-20
35
-25
30
Efficiency
-30
25
-35
20
-40
15
-45
10
-50 ^{IMD Low}
5
-55
36.0
38.0
40.0
42.0
Average Output Power (dBm)
0
44.0
PTFA191001E
PTFA191001F
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.2 A
0.6 A
1.0 A
1.5 A
3.0 A
4.5 A
6.0 A
7.5 A
9.0 A
0
20 40 60 80 100
Case Temperature (°C)
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
1900
1930
1960
1990
2020
Z Source Ω
R
jX
5.41
–4.79
5.23
–4.54
5.05
–4.32
4.92
–4.06
4.79
–3.81
Z Load Ω
R
jX
2.88
2.91
2.81
3.18
2.77
3.39
2.80
3.63
2.73
3.89
Z₀ = 50 Ω
Z Load
2020 MHz
1900 MHz
Z Source
2020 MHz
0 ^.1
1900 MHz
Data Sheet
5 of 11
Rev. 04, 2007-10-31