PTFB213208FV Datasheet, PDF (7/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz

PTFB213208FV
Confidential, Limited Internal Distribution
Reference Circuit
RF^P1_^OI^RN^T
R106
5100 Ohm
TL136
TL118
R803
10 Ohm
C801
1000 pF
S3
1
Out
8
In
NC
NC
5
4
7 63 2
C803
1000 pF
S1
R801
3
1200 Ohm
C802
1000 pF
R802
1300 Ohm
S2
2C
1
4
B
S
3E
R105
5100 Ohm
TL137
TL155
2
1
3
4
TL105
TL123
C101
100000 pF
2
TL140 ³
1
R101
10 Ohm
TL157
TL156
1
2
3
C110
10 pF
TL134
TL117
TL130
R102
0 Ohm
TL110 TL152
1
2
3
C106
1.5 pF
TL104
C108
4700000 pF
2
TL144 3
1
TL103
C109
TL153 ^{10 pF}
TL109 TL119
TL126
2
TL141 ³
1
C102
4700000 pF
TL112
TL108 TL138
1
3
2
TL111
TL133
TL114 TL102
C105
8.2 pF
TL146 TL121 TL147 TL107 TL139
3
2
1
C107
10 pF
TL113 TL120 TL149 TL125 TL148 TL154 _TL142
1
2
3
TL122
TL106
TL127
2
TL143 ³
1
C103
100000 pF
TL135
2
TL145 ³
1
TL101
TL129
R104
10 Ohm
TL131
C104
10 pF
TL151
3
2
1
TL150
TL132
R103
0 Ohm
TL128
TL115
b 21 3 20 8 fs v- v 1_ B D -i n_3 - 15 - 2 01 2
TL116
TL124
GPAOTERTDUT
P2in G1
GPAOTRETDUT
P3in G2
εr = 3.48
H = 20 mil
RO/RO4350B1
Reference circuit input schematic for ƒ = 2170 MHz
Data Sheet – DRAFT ONLY
7 of 13
Rev. 02, 2012-07-03