PTFB213208FV Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz

PTFB213208FV
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
320 W, 28 V, 2110 – 2170 MHz
Description
The PTFB213208SV is a 320-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2110
to 2170 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTFB213208FV
Package H-34275G-6/2
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 2.7 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-25
35
-30
30
IMD Up
-35
25
-40
IMD Low
-45
-50
-55
20
15
ACPR
Efficiency
10
5
-60
b213208fv-gr16
0
36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
Features
• Broadband internal matching
• Wide video bandwidth
• Typical pulsed CW performance, 2140 MHz, 28 V
(combined outputs)
- Output power @ P_1dB = 343 W
- Efficiency = 54%
- Gain = 16.5 dB
• Typical single-carrier WCDMA performance,
2140 MHz, 28 V
- Output power = 50 dBm avg
- Gain = 17 dB
- Efficiency = 32%
• Capable of handling 10:1 VSWR @ 28 V, 320 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 2.6 A, P_OUT = 85 W average, ƒ = 2170 MHz
3GPP WCDMA signal, 3.84 MHz channel bandwidth, peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Min
Typ
Gps
15.75
17.0
ηD
—
32
ACPR
—
–35
Max
—
—
–29.5
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet – DRAFT ONLY
1 of 13
Rev. 02, 2012-07-03