PTFB213208FV Datasheet, PDF (2/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz

PTFB213208FV
Confidential, Limited Internal Distribution
DC Characteristics (both sides)
Characteristic
Conditions
Symbol
Min
Typ
Max Unit
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
—
—
V
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
1.0
µA
V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
10.0
µA
On-State Resistance
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.05
—
Ω
Operating Gate Voltage
V_DS = 28 V, I_DQ = 2.6 A
V_GS
2.3
2.8
3.3
V
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
1.0
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 200 W CW)
Symbol
V_DSS
V_GS
T_J
T_STG
R_θJC
Value
65
–6 to +10
200
–40 to +150
0.20
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version Order Code
Package Description
PTFB213208FV V1
PTFB213208FVV1XWSA1
H-34275G-6/2, ceramic open-cavity, push-pull earless
PTFB213208FV V1 R250 PTFB213208FVV1R250XTMA1 H-34275G-6/2, ceramic open-cavity, push-pull earless
Shipping
Tray
Tape & Reel, 250 pcs
Pinout Diagram (top view)
V1
D1
V2
D2
G1
SS=(flfalannge)
G2
H-37275G-6-2_pd_08-30-2011
Lead connections for PTFB213208SV
Pin
Description
V1
V_DD device 1
V2
V_DD device 2
D1
Drain device 1
D2
Drain device 2
G1
Gate device 1
G2
Gate device 2
S
Source (flange)
Data Sheet – DRAFT ONLY
2 of 13
Rev. 02, 2012-07-03