PTFB213208FV Datasheet, PDF (5/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up
at selected frequencies
V_DD = 28 V, I_DQ = 2.7 A, tone spacing = 1 MHz
-20
-30
-40
-50
-60
-70
36
2110 MHz
2140 MHz
2170 MHz
40
44
48
b213208fv-gr13
52
Output Power, PEP (dBm)
PTFB213208FV
Two-tone Broadband Performance
V_DD = 28 V, I_DQ = 2.7 A, P_OUT = 126 W
45
-5
40
IRL
-10
35
-15
30
-20
Efficiency
25
-25
20
-30
15 _Gain
-35
10
-40
5
2050
2100
2150
2200
b213208fv-gr15
-45
2250
Frequency(MHz)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 2.7 A, ƒ = 2170 MHz
-20
-30
-40
-50
-60
-70
35
50
40
IM3L
30
20
Efficiency
10
40
45
50
b213208fv-gr12
0
55
Output Power, PEP (dBm)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 2.7 A, ƒ = 2140 MHz,
tone spacing = 1 MHz
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
35
IM3L
40
IM5L
IM7L
Efficiency
30
20
10
40
45
50
Output Power, PEP (dBm)
b213208fv-gr11
0
55
Data Sheet – DRAFT ONLY
5 of 13
Rev. 02, 2012-07-03