PTFB213208FV Datasheet, PDF (6/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Frequency
MHz
2100
2110
2120
2130
2140
2150
2160
2170
2180
2190
2200
Z Source Ω
R
jX
3.34
–5.60
3.32
–5.61
3.30
–5.62
3.27
–5.63
3.24
–5.64
3.21
–5.65
3.18
–5.66
3.15
–5.67
3.11
–5.68
3.07
–5.69
3.03
–5.70
Z Load Ω
R
jX
0.55
–1.99
0.55
–1.96
0.55
–1.94
0.54
–1.92
0.54
–1.89
0.54
–1.87
0.54
–1.85
0.54
–1.82
0.54
–1.80
0.54
–1.78
0.54
–1.75
See next page for reference circuit information
PTFB213208FV
Data Sheet – DRAFT ONLY
6 of 13
Rev. 02, 2012-07-03