PTFB213208FV Datasheet, PDF (4/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.7 A,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-20
-25
IM3 Low
IM3 Up
-30
-35
-40
-45
2170 MHz
2140 MHz
-50
2110 MHz
-55
b213208fv-gr8
35 38 41 44 47 50 53
Average Output Power (dBm)
PTFB213208FV
Single Carrier WCDMA
Broadband Performance
V_DD = 28 V, I_DQ = 2.7 A, P_OUT = 80 W
20
19
18
17
16
15
2040
0
Gain
-5
-10
-15
Return Loss
-20
2090
2140
2190
Frequency (MHz)
b213208f v-gr17
-25
2240
CW Drive-up
V_DD = 28 V, I_DQ = 2.7 A, ƒ = 2170
20
60
Efficiency
19
50
18
40
17
30
Gain
16
20
15
45
b213208fv-gr9
10
47
49
51
53
55
Output Power, PEP (dBm)
Two-tone Drive-up (over temperature)
V_DD = 28 V, I_DQ = 2.7 A,
ƒ₁ = 2139.5 MHz, ƒ₂ = 2140.5 MHz
20
50
+25°C
19
+85°C
40
–20°C
18
30
17
16
15
35
Gain
Efficiency
40
45
50
Output Power, Avg. (dBm)
20
10
b213208fv-gr6
0
55
Data Sheet – DRAFT ONLY
4 of 13
Rev. 02, 2012-07-03