PTFB213208FV Datasheet, PDF (12/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz

PTFB213208FV
Confidential, Limited Internal Distribution
Package Outline Specifications
2X ' 45° x .64
[.025]
2X 30°
6X 4.04±0.51
[.159±.020]
V1
Package H-34275G-6/2
(13.72
[.540])
30.61
[1.205]
2X (1.27
[.050])
CL
D1
D2
2X 2.22
[.087]
2X 2.29
[.090]
V2
10.16
[.400]
CL
(18.24
[.718])
4X R0.51+-.1.338
[ ^R.020 ] ^+-.0.00155
[ ] ^{4.1.5880++--0.0.0.010.123505}
SPH 2.134
[.084]
G1
CL
2X 26.16
[1.030]
G2
CL
4X 12.45
[.490]
31.24±0.28
[1.230±.011]
CL
1.63
[0.064]
H-34275G-6/2_sl_po_05-10-2012
32.26
[1.270]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D1, D2 - drain; G1, G2 - gate; S - source; V1, V2 - V_DD.
5. Lead thickness: 0.127 +0.051/–0.025 [.005 +.002/–.001].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
(www.infineon.com/rfpower)
Data Sheet – DRAFT ONLY
12 of 13
Rev. 02, 2012-07-03