PTFB213208FV Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz

PTFB213208FV
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Single-carrier WCDMA 3GPP Drive-up
V_DD = 28V, I_DQ = 2.7 A, ƒ = 2170 MHz
3GPP WCDMA signal,
PAR = 7.5 dB, 3.84 MHz BW
24
60
20 _Gain
40
16
20
Efficiency
12
0
PAR @ 0.01% CCDF
8
-20
4
0
35
ACP Low
40
45
50
Output Power Avg(dBm)
-40
b213208fv-gr2
-60
55
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2.7 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 7.5,
BW = 3.84 MHz
-10
50
-20
40
Efficiency
-30
30
-40
20
-50
-60
35
ACP Low 10
ACP Up
b213208fv-gr3
0
40
45
50
55
Average Output Power (dBm)
Single-carrier WCDMA 3GPP
Broadband Performance
V_DD = 28 V, I_DQ = 2.7 A, P_OUT = 100 W
40
Efficiency
30
20 Gain
10 PAR
0
-10
Return Loss
-20
ACP Up
-30
0
2060
2100
2140
2180
Frequency (MHz)
b213208fv-gr4
-40
2220
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 2.7 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
19
40
18 ^Gain
30
17
20
16
Efficiency
10
15
36
b213208fv-gr5
0
38 40 42 44 46 48 50 52
Average Output Power (dBm)
Data Sheet – DRAFT ONLY
3 of 13
Rev. 02, 2012-07-03