BFR740L3RH_16 Datasheet, PDF (7/29 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFR740L3RH
1
Product Brief
Product Brief
The BFR740L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon’s reliable high
volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR740L3RH provides a
transition frequency f_T of approximately 40 GHz and is suited for low voltage applications (V_CEO,max = 4 V) from
VHF to 12 GHz. Due to its low power consumption the device is very energy efficient and well suited for mobile
applications. The BFR740L3RH is housed in a very thin small leadless package ideal for modules.
2
Features
• Very low noise figure NF_min = 0.5 dB at 1.9 GHz, 0.8 dB at
5.5 GHz, 3 V, 6 mA
• High power gain G_ms = 20 dB at 5.5 GHz, 15 mA, 3 V
• Very thin small leadless package (height only 0.31 mm), hence
ideal for modules with compact size and low profile height
• Pb-free (RoHS compliant) and halogen-free package
• Qualification report according to AEC-Q101 available
TSLP-3-9
3
Applications
As Low Noise Amplifier (LNA) in
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5/3.5/5.5 GHz, UWB,
Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and
C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Data Sheet
7
Revision 2.1, 2016-03-16